DHE50N06FZC Specs and Replacement

Type Designator: DHE50N06FZC

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 143 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 82 nS

Cossⓘ - Output Capacitance: 608 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO263

DHE50N06FZC substitution

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DHE50N06FZC datasheet

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DHE50N06FZC

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DHE50N06FZC

DH50N15/DHF50N15/ DHI50N15/DHE50N15 50A 150V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets. used 2 D V = 150V DSS advanced trench process technology design, provided excellent Rdson and low gate charge. Which accords with the R = 18m DS(on) (Type) G RoHS standard. 1 I = 50A 3 S D 2 Features Low on resistance Low... See More ⇒

Detailed specifications: DH045N06B, DH045N06D, DH045N06E, DH045N06F, DH045N06I, DH060N03R, DH060N07B, DH060N07D, AON7506, DHE50N15, DHE8004, DHE80N08B22, DHE8290, DHE85N08, DHE90N045R, DHE90N055R, DHE9Z24

Keywords - DHE50N06FZC MOSFET specs

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