All MOSFET. DHE50N06FZC Datasheet

 

DHE50N06FZC Datasheet and Replacement


   Type Designator: DHE50N06FZC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 143 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 82 nS
   Cossⓘ - Output Capacitance: 608 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO263
 

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DHE50N06FZC Datasheet (PDF)

 ..1. Size:1704K  cn wxdh
 dh50n06fzc dhf50n06fzc dhi50n06fzc dhe50n06fzc dhb50n06fzc dhd50n06fzc.pdf pdf_icon

DHE50N06FZC

DH50N06FZC/DHF50N06FZC/DHI50N06FZC/DHE50N06FZC/DHB50N06FZC/DHD50N06FZC50A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel Enhanced VDMOSFETs Used2 DVDSS = 60Vadvanced trench technology design, provided excellentRDSON and low gate charge. Which accords with theRDS = 18m(on) (TYP)GRoHS standard.1ID = 50A3 S2 Features Fast Switching

 8.1. Size:1399K  cn wxdh
 dh50n15 dhf50n15 dhi50n15 dhe50n15.pdf pdf_icon

DHE50N06FZC

DH50N15/DHF50N15/DHI50N15/DHE50N1550A 150V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets. used2 DV = 150VDSSadvanced trench process technology design, providedexcellent Rdson and low gate charge. Which accords with theR = 18mDS(on) (Type)GRoHS standard.1I = 50A3 S D2 Features Low on resistance Low

Datasheet: DH045N06B , DH045N06D , DH045N06E , DH045N06F , DH045N06I , DH060N03R , DH060N07B , DH060N07D , IRFP250 , DHE50N15 , DHE8004 , DHE80N08B22 , DHE8290 , DHE85N08 , DHE90N045R , DHE90N055R , DHE9Z24 .

History: CEB08N8 | TSF18N50MR | STN4438 | STN3414 | BUK9K18-40E | CS6N70F | YJG90G10A

Keywords - DHE50N06FZC MOSFET datasheet

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