DHE8290 Datasheet and Replacement
Type Designator: DHE8290
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 170 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 82 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 386 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO263
DHE8290 substitution
DHE8290 Datasheet (PDF)
dh8290 dhf8290 dhi8290 dhe8290 dhb8290 dhd8290.pdf

DH8290/DHF8290/DHI8290/DHE8290/DHB8290/DHD829070A 82V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 82VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 9.5mDS(on) (Type)Gstandard.1I = 70AD3 S2 Features Fast switching Hig
Datasheet: DH045N06I , DH060N03R , DH060N07B , DH060N07D , DHE50N06FZC , DHE50N15 , DHE8004 , DHE80N08B22 , IRFP450 , DHE85N08 , DHE90N045R , DHE90N055R , DHE9Z24 , DHESJ11N65 , DHESJ13N65 , DHESJ17N65 , DHEZ24B31 .
History: SIHFU214 | IXFX260N17T | AP9974AGH-HF | CSI460 | SIHFU224 | AP9973GJ-HF | SIHFU320
Keywords - DHE8290 MOSFET datasheet
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History: SIHFU214 | IXFX260N17T | AP9974AGH-HF | CSI460 | SIHFU224 | AP9973GJ-HF | SIHFU320



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