DHE8290 Specs and Replacement

Type Designator: DHE8290

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 170 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 82 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 68 nS

Cossⓘ - Output Capacitance: 386 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO263

DHE8290 substitution

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DHE8290 datasheet

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DHE8290

DH8290/DHF8290/DHI8290/ DHE8290/DHB8290/DHD8290 70A 82V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 82V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 9.5m DS(on) (Type) G standard. 1 I = 70A D 3 S 2 Features Fast switching Hig... See More ⇒

Detailed specifications: DH045N06I, DH060N03R, DH060N07B, DH060N07D, DHE50N06FZC, DHE50N15, DHE8004, DHE80N08B22, AO4407, DHE85N08, DHE90N045R, DHE90N055R, DHE9Z24, DHESJ11N65, DHESJ13N65, DHESJ17N65, DHEZ24B31

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