DHE85N08 Specs and Replacement

Type Designator: DHE85N08

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 175 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 132 nS

Cossⓘ - Output Capacitance: 410 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm

Package: TO263

DHE85N08 substitution

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DHE85N08 datasheet

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 dh85n08 dhf85n08 dhi85n08 dhe85n08.pdf pdf_icon

DHE85N08

DH85N08/DHF85N08/ DHI85N08/DHE85N08 100A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 6.1m DS(on) (TYP) standard. 1 3 S I = 100A D 2 Features Low on resistance Low gate ch... See More ⇒

Detailed specifications: DH060N03R, DH060N07B, DH060N07D, DHE50N06FZC, DHE50N15, DHE8004, DHE80N08B22, DHE8290, BS170, DHE90N045R, DHE90N055R, DHE9Z24, DHESJ11N65, DHESJ13N65, DHESJ17N65, DHEZ24B31, DHF035N04

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