FDD14AN06LF085 Spec and Replacement
Type Designator: FDD14AN06LF085
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0116 Ohm
Package: TO252
FDD14AN06LF085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD14AN06LF085 Specs
fdd14an06l f085.pdf
December 2010 FDD14AN06LA0_F085 N-Channel PowerTrench MOSFET 60V, 50A, 14.6m Features Applications rDS(ON) = 12.8m (Typ.), VGS = 5V, ID = 50A Motor / Body Load Control Qg(tot) = 25nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) ... See More ⇒
fdd14an06la0.pdf
January 2004 FDD14AN06LA0 N-Channel PowerTrench MOSFET 60V, 50A, 14.6m Features Applications rDS(ON) = 12.8m (Typ.), VGS = 5V, ID = 50A Motor / Body Load Control Qg(tot) = 25nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC ... See More ⇒
Detailed specifications: FQT13N06 , FQT13N06L , FQT1N60C , HUF76413DKF085 , FQT1N80 , HUF76407DKF085 , FQT3P20 , FQT4N20L , IRFP064N , FQT4N25 , FQT5P10 , FQT7N10 , FDB14AN06LF085 , FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A .
Keywords - FDD14AN06LF085 MOSFET specs
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