All MOSFET. FDD14AN06L_F085 Datasheet

 

FDD14AN06L_F085 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD14AN06L_F085

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 24 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0116 Ohm

Package: TO252

FDD14AN06L_F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD14AN06L_F085 Datasheet (PDF)

1.1. fdd14an06la0.pdf Size:224K _upd-mosfet

FDD14AN06L_F085
FDD14AN06L_F085

January 2004 FDD14AN06LA0 N-Channel PowerTrench® MOSFET 60V, 50A, 14.6mΩ Features Applications • rDS(ON) = 12.8mΩ (Typ.), VGS = 5V, ID = 50A • Motor / Body Load Control • Qg(tot) = 25nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management • Low QRR Body Diode • Injection Systems • UIS Capability (Single Pulse and Repetitive Pulse) • DC-DC

1.2. fdd14an06l f085.pdf Size:372K _fairchild_semi

FDD14AN06L_F085
FDD14AN06L_F085

December 2010 FDD14AN06LA0_F085 N-Channel PowerTrench® MOSFET 60V, 50A, 14.6mΩ Features Applications • rDS(ON) = 12.8mΩ (Typ.), VGS = 5V, ID = 50A • Motor / Body Load Control • Qg(tot) = 25nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management • Low QRR Body Diode • Injection Systems • UIS Capability (Single Pulse and Repetitive Pulse) •

 

Datasheet: FQT13N06 , FQT13N06L , FQT1N60C , HUF76413DK_F085 , FQT1N80 , HUF76407DK_F085 , FQT3P20 , FQT4N20L , 2SK1058 , FQT4N25 , FQT5P10 , FQT7N10 , FDB14AN06L_F085 , FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A .

 

 
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