All MOSFET. DHB8290 Datasheet

 

DHB8290 Datasheet and Replacement


   Type Designator: DHB8290
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 82 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 386 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO251
 

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DHB8290 Datasheet (PDF)

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DHB8290

DH8290/DHF8290/DHI8290/DHE8290/DHB8290/DHD829070A 82V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 82VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 9.5mDS(on) (Type)Gstandard.1I = 70AD3 S2 Features Fast switching Hig

Datasheet: DHS020N88U , DHS021N04 , DHS021N04B , DHS021N04D , DHS021N04E , DHS021N04P , DHS022N06 , DHS022N06E , IRF1405 , DHB90N03B17 , DHB90N045R , DHB9Z24 , DHBSJ11N65 , DHBSJ13N65 , DHBSJ5N65 , DHBSJ7N65 , DHBZ24B31 .

History: PJN1NA50 | IRF7751GTR

Keywords - DHB8290 MOSFET datasheet

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