DHB8290 Datasheet. Specs and Replacement

Type Designator: DHB8290  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 170 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 82 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 68 nS

Cossⓘ - Output Capacitance: 386 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO251

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DHB8290 datasheet

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DHB8290

DH8290/DHF8290/DHI8290/ DHE8290/DHB8290/DHD8290 70A 82V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 82V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 9.5m DS(on) (Type) G standard. 1 I = 70A D 3 S 2 Features Fast switching Hig... See More ⇒

Detailed specifications: DHS020N88U, DHS021N04, DHS021N04B, DHS021N04D, DHS021N04E, DHS021N04P, DHS022N06, DHS022N06E, FTP08N06A, DHB90N03B17, DHB90N045R, DHB9Z24, DHBSJ11N65, DHBSJ13N65, DHBSJ5N65, DHBSJ7N65, DHBZ24B31

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