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DHB90N03B17 PDF Specs and Replacement


   Type Designator: DHB90N03B17
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 36.4 nS
   Cossⓘ - Output Capacitance: 248 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO251
 

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DHB90N03B17 PDF Specs

 ..1. Size:1086K  cn wxdh
 dhb90n03b17 dhd90n03b17.pdf pdf_icon

DHB90N03B17

DHB90N03B17/DHD90N03B17 90A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 4.0m DS(on) (TYP) standard. 1 3 S I = 90A D 2 Features Low on resistance Low gate charge Fast ... See More ⇒

 7.1. Size:1390K  cn wxdh
 dh90n045r dhf90n045r dhi90n045r dhe90n045r dhb90n045r dhd90n045r.pdf pdf_icon

DHB90N03B17

DH90N045R/DHF90N045R/DHI90N045R DHE90N045R/DHB90N045R/DHD90N045R 120A 98V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 98V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.6m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Feature... See More ⇒

Detailed specifications: DHS021N04 , DHS021N04B , DHS021N04D , DHS021N04E , DHS021N04P , DHS022N06 , DHS022N06E , DHB8290 , IRLB3034 , DHB90N045R , DHB9Z24 , DHBSJ11N65 , DHBSJ13N65 , DHBSJ5N65 , DHBSJ7N65 , DHBZ24B31 , DHD015N06 .

History: NTGS3130N

Keywords - DHB90N03B17 MOSFET specs

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