DHB90N03B17 Datasheet. Specs and Replacement

Type Designator: DHB90N03B17  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36.4 nS

Cossⓘ - Output Capacitance: 248 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO251

  📄📄 Copy 

DHB90N03B17 substitution

- MOSFET ⓘ Cross-Reference Search

 

DHB90N03B17 datasheet

 ..1. Size:1086K  cn wxdh
 dhb90n03b17 dhd90n03b17.pdf pdf_icon

DHB90N03B17

DHB90N03B17/DHD90N03B17 90A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 4.0m DS(on) (TYP) standard. 1 3 S I = 90A D 2 Features Low on resistance Low gate charge Fast ... See More ⇒

 7.1. Size:1390K  cn wxdh
 dh90n045r dhf90n045r dhi90n045r dhe90n045r dhb90n045r dhd90n045r.pdf pdf_icon

DHB90N03B17

DH90N045R/DHF90N045R/DHI90N045R DHE90N045R/DHB90N045R/DHD90N045R 120A 98V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 98V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.6m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Feature... See More ⇒

Detailed specifications: DHS021N04, DHS021N04B, DHS021N04D, DHS021N04E, DHS021N04P, DHS022N06, DHS022N06E, DHB8290, IRFB31N20D, DHB90N045R, DHB9Z24, DHBSJ11N65, DHBSJ13N65, DHBSJ5N65, DHBSJ7N65, DHBZ24B31, DHD015N06

Keywords - DHB90N03B17 MOSFET specs

 DHB90N03B17 cross reference

 DHB90N03B17 equivalent finder

 DHB90N03B17 pdf lookup

 DHB90N03B17 substitution

 DHB90N03B17 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility