All MOSFET. DHD100N03B13 Datasheet

 

DHD100N03B13 Datasheet and Replacement


   Type Designator: DHD100N03B13
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 325 nS
   Cossⓘ - Output Capacitance: 426 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO252
 

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DHD100N03B13 Datasheet (PDF)

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DHD100N03B13

DH100N03B13/DHF100N03B13/DHI100N03B13/DHE100N03B13/DHB100N03B13/DHD100N03B13100A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 3.3mDS(on) (TYP)standard.13 SI = 100AD2 Featur

Datasheet: DHB9Z24 , DHBSJ11N65 , DHBSJ13N65 , DHBSJ5N65 , DHBSJ7N65 , DHBZ24B31 , DHD015N06 , DHD035N04 , AO4468 , DHD16N06 , DHD3205A , DHD3N90 , DHD50N03 , DHF10H037R , DHF16N06 , DHF3205A , DHF3N90 .

History: CEB6086 | AP60WN2K3H | CSD25302Q2

Keywords - DHD100N03B13 MOSFET datasheet

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