DHD100N03B13 Datasheet. Specs and Replacement

Type Designator: DHD100N03B13  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 325 nS

Cossⓘ - Output Capacitance: 426 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: TO252

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DHD100N03B13 datasheet

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DHD100N03B13

DH100N03B13/DHF100N03B13/DHI100N03B13/ DHE100N03B13/DHB100N03B13/DHD100N03B13 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 3.3m DS(on) (TYP) standard. 1 3 S I = 100A D 2 Featur... See More ⇒

Detailed specifications: DHB9Z24, DHBSJ11N65, DHBSJ13N65, DHBSJ5N65, DHBSJ7N65, DHBZ24B31, DHD015N06, DHD035N04, IRF9640, DHD16N06, DHD3205A, DHD3N90, DHD50N03, DHF10H037R, DHF16N06, DHF3205A, DHF3N90

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.