DHD16N06 Datasheet. Specs and Replacement

Type Designator: DHD16N06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 61 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 123 nS

Cossⓘ - Output Capacitance: 607 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO252

  📄📄 Copy 

DHD16N06 substitution

- MOSFET ⓘ Cross-Reference Search

 

DHD16N06 datasheet

 ..1. Size:1349K  cn wxdh
 dh16n06 dhf16n06 dhi16n06 dhe16n06 dhb16n06 dhd16n06.pdf pdf_icon

DHD16N06

DH16N06/DHF16N06/DHI16N06/ DHE16N06/DHB16N06/DHD16N06 61A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used by the 2 D VDSS = 60V self-aligned planar technology which reduce the conduction loss, improve switching performance and RDS = 16m (on) (TYP) G enhance the avalanche energy. Which accords with the 1 RoHS standard. ID = 61A 3... See More ⇒

Detailed specifications: DHBSJ11N65, DHBSJ13N65, DHBSJ5N65, DHBSJ7N65, DHBZ24B31, DHD015N06, DHD035N04, DHD100N03B13, AON6426, DHD3205A, DHD3N90, DHD50N03, DHF10H037R, DHF16N06, DHF3205A, DHF3N90, DHF50N06FZC

Keywords - DHD16N06 MOSFET specs

 DHD16N06 cross reference

 DHD16N06 equivalent finder

 DHD16N06 pdf lookup

 DHD16N06 substitution

 DHD16N06 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs