DHF85N08 Datasheet. Specs and Replacement
Type Designator: DHF85N08 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 132 nS
Cossⓘ - Output Capacitance: 410 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO220F
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DHF85N08 datasheet
dh85n08 dhf85n08 dhi85n08 dhe85n08.pdf
DH85N08/DHF85N08/ DHI85N08/DHE85N08 100A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 6.1m DS(on) (TYP) standard. 1 3 S I = 100A D 2 Features Low on resistance Low gate ch... See More ⇒
Detailed specifications: DHF10H037R, DHF16N06, DHF3205A, DHF3N90, DHF50N06FZC, DHF50N15, DHF80N08B22, DHF8290, IRFB4110, DHF90N045R, DHF90N055R, DHF9Z24, DHFSJ11N65, DHFSJ13N65, DHFSJ17N65, DHFSJ5N65, DH060N08
Keywords - DHF85N08 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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History: 7080 | VBE2309 | NDP5060L | SM6F24NSUB | NCE1230SP | VBE1201K | AOB190A60L
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