DHF9Z24 Datasheet and Replacement
Type Designator: DHF9Z24
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 18 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 28.2 nC
trⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO220F
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DHF9Z24 Datasheet (PDF)
dh9z24 dhf9z24 dhi9z24 dhe9z24 dhb9z24 dhd9z24.pdf

DH9Z24/DHF9Z24/DHI9Z24DHE9Z24/DHB9Z24/DHD9Z2420A 60V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhanced vdmosfets, used advancedV = -60VDSStrench technology and design, provide to excellentRdson with low gate charge. Which accords with theR =58.5mDS(on) (TYP)RoHS standard.I = -20AD2 Features Fast switching Low on resistance
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