DHI9Z24 Datasheet. Specs and Replacement

Type Designator: DHI9Z24  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TO262

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DHI9Z24 datasheet

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DHI9Z24

DH9Z24/DHF9Z24/DHI9Z24 DHE9Z24/DHB9Z24/DHD9Z24 20A 60V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhanced vdmosfets, used advanced V = -60V DSS trench technology and design, provide to excellent Rdson with low gate charge. Which accords with the R =58.5m DS(on) (TYP) RoHS standard. I = -20A D 2 Features Fast switching Low on resistance ... See More ⇒

Detailed specifications: DH065N04F, DH065N04I, DH065N04P, DH065N06, DH065N06D, DH065N06E, DHI90N045R, DHI90N055R, 2SK3878, DHISJ11N65, DHISJ13N65, DHISJ17N65, DHIZ24B31, DHP035N04, DHP150N03, DHP50P04, DHS008N04P

Keywords - DHI9Z24 MOSFET specs

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