DHS015N06E Datasheet. Specs and Replacement

Type Designator: DHS015N06E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 227 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 62 nS

Cossⓘ - Output Capacitance: 2920 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: TO263

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DHS015N06E datasheet

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 dhs015n06 dhs015n06e.pdf pdf_icon

DHS015N06E

DHS015N06&DHS015N06E 180A 60V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET V = 60V DS 2 D utilizes advanced Split Gate Trench technology, which R = 1.8m TO-220 DS(on) (TYP) provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard. G R = 1.6m TO-263 DS(on) (TYP) 1 I ... See More ⇒

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DHS015N06E

DHS010N04U 40V/0.8m /300A N-MOSFET Features Key Parameters Low on resistance VDS 40V Low reverse transfer capacitances RDS(on)typ. 0.8m 100% single pulse avalanche energy test ID Silicon limit 426A 100% VDS test ID Package limit 300A Pb-Free plating / Halogen-Free / RoHS compliant Ciss@10V 9864pF Qgd 26nC Applications Power switching applications... See More ⇒

Detailed specifications: DHISJ17N65, DHIZ24B31, DHP035N04, DHP150N03, DHP50P04, DHS008N04P, DHS010N04U, DHS015N06, 20N50, DHS020N04, DHS020N04B, DH081N03E, DH081N03F, DH081N03I, DH850N10I, DH85N08, DH90N045R

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