DH081N03E Datasheet. Specs and Replacement

Type Designator: DH081N03E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 91 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO263

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DH081N03E datasheet

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DH081N03E

DH081N03/DH081N03F/DH081N03I DH081N03E/DH081N03B/DH081N03D 60A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V =30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R =8.1m DS(on) (TYP) standard. 1 3 S I =60A D 2 Features Low on resistanc... See More ⇒

Detailed specifications: DHP150N03, DHP50P04, DHS008N04P, DHS010N04U, DHS015N06, DHS015N06E, DHS020N04, DHS020N04B, RFP50N06, DH081N03F, DH081N03I, DH850N10I, DH85N08, DH90N045R, DH90N055R, DH9Z24, DHB035N04

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