All MOSFET. DH081N03E Datasheet

 

DH081N03E Datasheet and Replacement


   Type Designator: DH081N03E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 91 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO263
 

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DH081N03E Datasheet (PDF)

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DH081N03E

DH081N03/DH081N03F/DH081N03IDH081N03E/DH081N03B/DH081N03D60A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV =30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR =8.1mDS(on) (TYP)standard.13 SI =60AD2 Features Low on resistanc

Datasheet: DHP150N03 , DHP50P04 , DHS008N04P , DHS010N04U , DHS015N06 , DHS015N06E , DHS020N04 , DHS020N04B , AON7506 , DH081N03F , DH081N03I , DH850N10I , DH85N08 , DH90N045R , DH90N055R , DH9Z24 , DHB035N04 .

History: CS3N80BK | 2SJ274 | AP6N100H | 2SK3457 | NVTFS4C10N

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