All MOSFET. DH850N10I Datasheet

 

DH850N10I Datasheet and Replacement


   Type Designator: DH850N10I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19.2 nS
   Cossⓘ - Output Capacitance: 33 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO262
 

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DH850N10I Datasheet (PDF)

 ..1. Size:1158K  cn wxdh
 dh850n10 dh850n10f dh850n10i dh850n10e dh850n10b dh850n10d.pdf pdf_icon

DH850N10I

DH850N10/DH850N10F/DH850N10IDH850N10E/DH850N10B/DH850N10D15A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 86mDS(on) (TYP)standard.13 SID =15A2 Features Low on resistan

 6.1. Size:791K  cn wxdh
 dh850n10b dh850n10d.pdf pdf_icon

DH850N10I

DH850N10B/DH850N10D12A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 86mDS(on) (TYP)standard.13 SID =12A2 Features Low on resistance Low gate charge Fast switch

Datasheet: DHS010N04U , DHS015N06 , DHS015N06E , DHS020N04 , DHS020N04B , DH081N03E , DH081N03F , DH081N03I , IRFP450 , DH85N08 , DH90N045R , DH90N055R , DH9Z24 , DHB035N04 , DHB100N03B13 , DHB16N06 , DHB3205A .

History: TPCF8305 | 2SK660 | CS6N70FB9D | QM4014D | QM3001V | QM3014N3 | 2SK2314

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