DH850N10I Datasheet. Specs and Replacement

Type Designator: DH850N10I  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.2 nS

Cossⓘ - Output Capacitance: 33 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: TO262

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DH850N10I datasheet

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 dh850n10 dh850n10f dh850n10i dh850n10e dh850n10b dh850n10d.pdf pdf_icon

DH850N10I

DH850N10/DH850N10F/DH850N10I DH850N10E/DH850N10B/DH850N10D 15A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 86m DS(on) (TYP) standard. 1 3 S ID =15A 2 Features Low on resistan... See More ⇒

 6.1. Size:791K  cn wxdh
 dh850n10b dh850n10d.pdf pdf_icon

DH850N10I

DH850N10B/DH850N10D 12A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 86m DS(on) (TYP) standard. 1 3 S ID =12A 2 Features Low on resistance Low gate charge Fast switch... See More ⇒

Detailed specifications: DHS010N04U, DHS015N06, DHS015N06E, DHS020N04, DHS020N04B, DH081N03E, DH081N03F, DH081N03I, NCEP15T14, DH85N08, DH90N045R, DH90N055R, DH9Z24, DHB035N04, DHB100N03B13, DHB16N06, DHB3205A

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