All MOSFET. DHB035N04 Datasheet

 

DHB035N04 Datasheet and Replacement


   Type Designator: DHB035N04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 155 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 121 nC
   trⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 690 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO251
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DHB035N04 Datasheet (PDF)

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DHB035N04

DH035N04/DHF035N04/DHI035N04/DHE035N04/DHB035N04/DHD035N04155A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets used advanced2 DV = 40VDSStrench technology design, provided excellent Rdson andlow gate charge. Which accords with the RoHS standard.R = 2.3mDS(on) (TYP)G12 Features I = 155AD3 S Fast switching High

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