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DHB035N04 Spec and Replacement


   Type Designator: DHB035N04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 155 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 690 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO251

 DHB035N04 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DHB035N04 Specs

 ..1. Size:1614K  cn wxdh
 dh035n04 dhf035n04 dhi035n04 dhe035n04 dhb035n04 dhd035n04.pdf pdf_icon

DHB035N04

DH035N04/DHF035N04/DHI035N04/ DHE035N04/DHB035N04/DHD035N04 155A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets used advanced 2 D V = 40V DSS trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. R = 2.3m DS(on) (TYP) G 1 2 Features I = 155A D 3 S Fast switching High... See More ⇒

Detailed specifications: DH081N03E , DH081N03F , DH081N03I , DH850N10I , DH85N08 , DH90N045R , DH90N055R , DH9Z24 , AO4407 , DHB100N03B13 , DHB16N06 , DHB3205A , DHB3N90 , DHB50N03 , DHB50N06FZC , DHB80N08B22 , DH066N06 .

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