All MOSFET. DHB100N03B13 Datasheet

 

DHB100N03B13 Datasheet and Replacement


   Type Designator: DHB100N03B13
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 325 nS
   Cossⓘ - Output Capacitance: 426 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO251
 

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DHB100N03B13 Datasheet (PDF)

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DHB100N03B13

DH100N03B13/DHF100N03B13/DHI100N03B13/DHE100N03B13/DHB100N03B13/DHD100N03B13100A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 3.3mDS(on) (TYP)standard.13 SI = 100AD2 Featur

Datasheet: DH081N03F , DH081N03I , DH850N10I , DH85N08 , DH90N045R , DH90N055R , DH9Z24 , DHB035N04 , 18N50 , DHB16N06 , DHB3205A , DHB3N90 , DHB50N03 , DHB50N06FZC , DHB80N08B22 , DH066N06 , DH066N06D .

History: PMV90ENE | CS50N06P | HAT2221C | SSM3K335R | NCV8408 | IRF7807ZPBF | APT47N60BCFG

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