DHB100N03B13 Datasheet. Specs and Replacement

Type Designator: DHB100N03B13  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 325 nS

Cossⓘ - Output Capacitance: 426 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: TO251

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DHB100N03B13 datasheet

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DHB100N03B13

DH100N03B13/DHF100N03B13/DHI100N03B13/ DHE100N03B13/DHB100N03B13/DHD100N03B13 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 3.3m DS(on) (TYP) standard. 1 3 S I = 100A D 2 Featur... See More ⇒

Detailed specifications: DH081N03F, DH081N03I, DH850N10I, DH85N08, DH90N045R, DH90N055R, DH9Z24, DHB035N04, BS170, DHB16N06, DHB3205A, DHB3N90, DHB50N03, DHB50N06FZC, DHB80N08B22, DH066N06, DH066N06D

Keywords - DHB100N03B13 MOSFET specs

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