DHB3205A Datasheet. Specs and Replacement

Type Designator: DHB3205A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 145 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37.7 nS

Cossⓘ - Output Capacitance: 309 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO251

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DHB3205A datasheet

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DHB3205A

DH3205A/DHF3205A/DHI3205A/ DHE3205A/DHB3205A/DHD3205A 100A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 68V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 6.0m DS(on) (TYP) standard. 1 3 S I = 100A D 2 Features Low on resistanc... See More ⇒

Detailed specifications: DH850N10I, DH85N08, DH90N045R, DH90N055R, DH9Z24, DHB035N04, DHB100N03B13, DHB16N06, IRFP250, DHB3N90, DHB50N03, DHB50N06FZC, DHB80N08B22, DH066N06, DH066N06D, DH066N06E, DH072N07

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