All MOSFET. DHB50N03 Datasheet

 

DHB50N03 Datasheet and Replacement


   Type Designator: DHB50N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 25.7 nC
   trⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO251
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DHB50N03 Datasheet (PDF)

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DHB50N03

DHB50N03/DHD50N0350A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets used advanced2 DV = 30VDSStrench technology design, provided excellent Rdson andlow gate charge. Which accords with the RoHS standard.R = 6.0mDS(on) (TYP)G12 Features I = 50A3 S D Low switching loss Low on resistance Low gate charge Lo

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DHB50N03

DH50N06FZC/DHF50N06FZC/DHI50N06FZC/DHE50N06FZC/DHB50N06FZC/DHD50N06FZC50A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel Enhanced VDMOSFETs Used2 DVDSS = 60Vadvanced trench technology design, provided excellentRDSON and low gate charge. Which accords with theRDS = 18m(on) (TYP)GRoHS standard.1ID = 50A3 S2 Features Fast Switching

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