DHB50N03 Datasheet. Specs and Replacement

Type Designator: DHB50N03  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO251

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DHB50N03 datasheet

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 dhb50n03 dhd50n03.pdf pdf_icon

DHB50N03

DHB50N03/DHD50N03 50A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets used advanced 2 D V = 30V DSS trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. R = 6.0m DS(on) (TYP) G 1 2 Features I = 50A 3 S D Low switching loss Low on resistance Low gate charge Lo... See More ⇒

 7.1. Size:1704K  cn wxdh
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DHB50N03

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Detailed specifications: DH90N045R, DH90N055R, DH9Z24, DHB035N04, DHB100N03B13, DHB16N06, DHB3205A, DHB3N90, IRF1407, DHB50N06FZC, DHB80N08B22, DH066N06, DH066N06D, DH066N06E, DH072N07, DH072N07B, DH072N07D

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