DHB50N06FZC Datasheet. Specs and Replacement

Type Designator: DHB50N06FZC  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 143 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 60 nC

tr ⓘ - Rise Time: 82 nS

Cossⓘ - Output Capacitance: 608 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO251

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DHB50N06FZC datasheet

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DHB50N06FZC

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DHB50N06FZC

DHB50N03/DHD50N03 50A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets used advanced 2 D V = 30V DSS trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. R = 6.0m DS(on) (TYP) G 1 2 Features I = 50A 3 S D Low switching loss Low on resistance Low gate charge Lo... See More ⇒

Detailed specifications: DH90N055R, DH9Z24, DHB035N04, DHB100N03B13, DHB16N06, DHB3205A, DHB3N90, DHB50N03, 10N65, DHB80N08B22, DH066N06, DH066N06D, DH066N06E, DH072N07, DH072N07B, DH072N07D, DH072N07E

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