All MOSFET. DHB50N06FZC Datasheet

 

DHB50N06FZC Datasheet and Replacement


   Type Designator: DHB50N06FZC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 143 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 82 nS
   Cossⓘ - Output Capacitance: 608 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO251
      - MOSFET Cross-Reference Search

 

DHB50N06FZC Datasheet (PDF)

 ..1. Size:1704K  cn wxdh
 dh50n06fzc dhf50n06fzc dhi50n06fzc dhe50n06fzc dhb50n06fzc dhd50n06fzc.pdf pdf_icon

DHB50N06FZC

DH50N06FZC/DHF50N06FZC/DHI50N06FZC/DHE50N06FZC/DHB50N06FZC/DHD50N06FZC50A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel Enhanced VDMOSFETs Used2 DVDSS = 60Vadvanced trench technology design, provided excellentRDSON and low gate charge. Which accords with theRDS = 18m(on) (TYP)GRoHS standard.1ID = 50A3 S2 Features Fast Switching

 7.1. Size:891K  cn wxdh
 dhb50n03 dhd50n03.pdf pdf_icon

DHB50N06FZC

DHB50N03/DHD50N0350A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets used advanced2 DV = 30VDSStrench technology design, provided excellent Rdson andlow gate charge. Which accords with the RoHS standard.R = 6.0mDS(on) (TYP)G12 Features I = 50A3 S D Low switching loss Low on resistance Low gate charge Lo

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Keywords - DHB50N06FZC MOSFET datasheet

 DHB50N06FZC cross reference
 DHB50N06FZC equivalent finder
 DHB50N06FZC lookup
 DHB50N06FZC substitution
 DHB50N06FZC replacement

 

 
Back to Top

 


 
.