All MOSFET. DHB50N06FZC Equivalents Search

 

DHB50N06FZC Spec and Replacement


   Type Designator: DHB50N06FZC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 143 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 82 nS
   Cossⓘ - Output Capacitance: 608 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO251

 DHB50N06FZC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DHB50N06FZC Specs

 ..1. Size:1704K  cn wxdh
 dh50n06fzc dhf50n06fzc dhi50n06fzc dhe50n06fzc dhb50n06fzc dhd50n06fzc.pdf pdf_icon

DHB50N06FZC

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 7.1. Size:891K  cn wxdh
 dhb50n03 dhd50n03.pdf pdf_icon

DHB50N06FZC

DHB50N03/DHD50N03 50A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets used advanced 2 D V = 30V DSS trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. R = 6.0m DS(on) (TYP) G 1 2 Features I = 50A 3 S D Low switching loss Low on resistance Low gate charge Lo... See More ⇒

Detailed specifications: DH90N055R , DH9Z24 , DHB035N04 , DHB100N03B13 , DHB16N06 , DHB3205A , DHB3N90 , DHB50N03 , 10N65 , DHB80N08B22 , DH066N06 , DH066N06D , DH066N06E , DH072N07 , DH072N07B , DH072N07D , DH072N07E .

Keywords - DHB50N06FZC MOSFET specs

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