DHB80N08B22 PDF and Equivalents Search

 

DHB80N08B22 Specs and Replacement


   Type Designator: DHB80N08B22
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 145 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 292 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO251
 

 DHB80N08B22 substitution

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DHB80N08B22 datasheet

 ..1. Size:1310K  cn wxdh
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DHB80N08B22

DH80N08B22/DHF80N08B22/DHI80N08B22/ DHE80N08B22/DHB80N08B22/DHD80N08B22 80A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 6.5m DS(on) (Type) G standard. 1 I = 80A 3 S D 2 Features ... See More ⇒

Detailed specifications: DH9Z24 , DHB035N04 , DHB100N03B13 , DHB16N06 , DHB3205A , DHB3N90 , DHB50N03 , DHB50N06FZC , 5N60 , DH066N06 , DH066N06D , DH066N06E , DH072N07 , DH072N07B , DH072N07D , DH072N07E , DH072N07F .

History: ZXMP2120G4

Keywords - DHB80N08B22 MOSFET specs

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