All MOSFET. DH075N08E Datasheet

 

DH075N08E Datasheet and Replacement


   Type Designator: DH075N08E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 95 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 282 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0081 Ohm
   Package: TO263
 

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DH075N08E Datasheet (PDF)

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DH075N08E

DH075N08&DH075N08E95A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 80VDSSadvanced trench technology design, provided excellent2 DRdson and low gate charge. Which accords with the RoHSR = 7.1mTO-263DS(on) (TYP)standard.G1R = 7.5mTO-220DS(on) (TYP)3 S2 FeaturesI = 95AD Low

Datasheet: DH066N06E , DH072N07 , DH072N07B , DH072N07D , DH072N07E , DH072N07F , DH072N07I , DH075N08 , IRFB31N20D , DH081N03 , DH081N03B , DH081N03D , DHD7N65 , DHD80N03 , DHD80N08 , DHD9Z24 , DHDSJ11N65 .

History: DHDSJ7N65 | IRFB4410ZGPBF | DH081N03D

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