DH075N08E Datasheet. Specs and Replacement

Type Designator: DH075N08E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 95 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 282 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0081 Ohm

Package: TO263

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DH075N08E datasheet

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DH075N08E

DH075N08&DH075N08E 95A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used V = 80V DSS advanced trench technology design, provided excellent 2 D Rdson and low gate charge. Which accords with the RoHS R = 7.1m TO-263 DS(on) (TYP) standard. G 1 R = 7.5m TO-220 DS(on) (TYP) 3 S 2 Features I = 95A D Low ... See More ⇒

Detailed specifications: DH066N06E, DH072N07, DH072N07B, DH072N07D, DH072N07E, DH072N07F, DH072N07I, DH075N08, 8N60, DH081N03, DH081N03B, DH081N03D, DHD7N65, DHD80N03, DHD80N08, DHD9Z24, DHDSJ11N65

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