DHD7N65 Datasheet. Specs and Replacement

Type Designator: DHD7N65  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 93 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO252

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DHD7N65 datasheet

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DHD7N65

DHD7N65 7A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 650V planar technology which reduce the conduction loss, improve switching I = 7.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) =1.2 Fast switching ESD improved capabil... See More ⇒

Detailed specifications: DH072N07E, DH072N07F, DH072N07I, DH075N08, DH075N08E, DH081N03, DH081N03B, DH081N03D, IRFB31N20D, DHD80N03, DHD80N08, DHD9Z24, DHDSJ11N65, DHDSJ13N65, DHDSJ5N65, DHDSJ7N65, DHDZ24B31

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