All MOSFET. DHD7N65 Datasheet

 

DHD7N65 Datasheet and Replacement


   Type Designator: DHD7N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 93 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO252
 

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DHD7N65 Datasheet (PDF)

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DHD7N65

DHD7N657A 650V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 650Vplanar technology which reduce the conduction loss, improve switchingI = 7.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard.RDS(on)TYP)=1.2 Fast switching ESD improved capabil

Datasheet: DH072N07E , DH072N07F , DH072N07I , DH075N08 , DH075N08E , DH081N03 , DH081N03B , DH081N03D , IRF730 , DHD80N03 , DHD80N08 , DHD9Z24 , DHDSJ11N65 , DHDSJ13N65 , DHDSJ5N65 , DHDSJ7N65 , DHDZ24B31 .

Keywords - DHD7N65 MOSFET datasheet

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