DHD9Z24 Datasheet. Specs and Replacement
Type Designator: DHD9Z24 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO252
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DHD9Z24 substitution
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DHD9Z24 datasheet
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DH9Z24/DHF9Z24/DHI9Z24 DHE9Z24/DHB9Z24/DHD9Z24 20A 60V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhanced vdmosfets, used advanced V = -60V DSS trench technology and design, provide to excellent Rdson with low gate charge. Which accords with the R =58.5m DS(on) (TYP) RoHS standard. I = -20A D 2 Features Fast switching Low on resistance ... See More ⇒
Detailed specifications: DH075N08, DH075N08E, DH081N03, DH081N03B, DH081N03D, DHD7N65, DHD80N03, DHD80N08, 7N60, DHDSJ11N65, DHDSJ13N65, DHDSJ5N65, DHDSJ7N65, DHDZ24B31, DHE029N08, DHE035N04, DHE100N03B13
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