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DHD9Z24 Spec and Replacement


   Type Designator: DHD9Z24
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO252

 DHD9Z24 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DHD9Z24 Specs

 ..1. Size:1095K  cn wxdh
 dh9z24 dhf9z24 dhi9z24 dhe9z24 dhb9z24 dhd9z24.pdf pdf_icon

DHD9Z24

DH9Z24/DHF9Z24/DHI9Z24 DHE9Z24/DHB9Z24/DHD9Z24 20A 60V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhanced vdmosfets, used advanced V = -60V DSS trench technology and design, provide to excellent Rdson with low gate charge. Which accords with the R =58.5m DS(on) (TYP) RoHS standard. I = -20A D 2 Features Fast switching Low on resistance ... See More ⇒

Detailed specifications: DH075N08 , DH075N08E , DH081N03 , DH081N03B , DH081N03D , DHD7N65 , DHD80N03 , DHD80N08 , 7N60 , DHDSJ11N65 , DHDSJ13N65 , DHDSJ5N65 , DHDSJ7N65 , DHDZ24B31 , DHE029N08 , DHE035N04 , DHE100N03B13 .

Keywords - DHD9Z24 MOSFET specs

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