DHE3N90 Datasheet. Specs and Replacement
Type Designator: DHE3N90 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 44 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
Package: TO263
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DHE3N90 datasheet
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DH3N90/DHF3N90/DHI3N90/ DHE3N90/DHB3N90/DHD3N90 3A 900V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the 2 D V = 900V DSS self-aligned planar technology which reduce the conduction loss, improve switching performance and R = 4.7 DS(on) (TYP) G enhance the avalanche energy. Which accords with the 1 RoHS standard. I = 3... See More ⇒
Detailed specifications: DHDZ24B31, DHE029N08, DHE035N04, DHE100N03B13, DHE10H035R, DHE10H037R, DHE16N06, DHE3205A, AO4407A, DHFSJ8N65, DHFZ24B31, DHI029N08, DHI035N04, DHI100N03B13, DHI10H035R, DHI10H037R, DHI16N06
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
