DHI50N15 Datasheet. Specs and Replacement

Type Designator: DHI50N15  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55.7 nS

Cossⓘ - Output Capacitance: 349 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO262

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DHI50N15 datasheet

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DHI50N15

DH50N15/DHF50N15/ DHI50N15/DHE50N15 50A 150V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets. used 2 D V = 150V DSS advanced trench process technology design, provided excellent Rdson and low gate charge. Which accords with the R = 18m DS(on) (Type) G RoHS standard. 1 I = 50A 3 S D 2 Features Low on resistance Low... See More ⇒

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DHI50N15

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Detailed specifications: DHI035N04, DHI100N03B13, DHI10H035R, DHI10H037R, DHI16N06, DHI3205A, DHI3N90, DHI50N06FZC, 50N06, DHI8004, DHI80N08B22, DHI8290, DHI85N08, DHD8290, DHD90N03B17, DHD50N06FZC, DHD80N08B22

Keywords - DHI50N15 MOSFET specs

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