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DHI8290 Spec and Replacement


   Type Designator: DHI8290
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 82 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 386 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO262

 DHI8290 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DHI8290 Specs

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DHI8290

DH8290/DHF8290/DHI8290/ DHE8290/DHB8290/DHD8290 70A 82V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 82V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 9.5m DS(on) (Type) G standard. 1 I = 70A D 3 S 2 Features Fast switching Hig... See More ⇒

Detailed specifications: DHI10H037R , DHI16N06 , DHI3205A , DHI3N90 , DHI50N06FZC , DHI50N15 , DHI8004 , DHI80N08B22 , IRF640 , DHI85N08 , DHD8290 , DHD90N03B17 , DHD50N06FZC , DHD80N08B22 , DHD90N045R , DHS025N06 , DHS025N06E .

History: FDC6306P | DHI50N06FZC | DHI80N08B22 | DHD90N045R

Keywords - DHI8290 MOSFET specs

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