DHD50N06FZC Spec and Replacement
Type Designator: DHD50N06FZC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 143 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 82 nS
Cossⓘ - Output Capacitance: 608 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TO251
DHD50N06FZC Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DHD50N06FZC Specs
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dhb50n03 dhd50n03.pdf
DHB50N03/DHD50N03 50A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets used advanced 2 D V = 30V DSS trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. R = 6.0m DS(on) (TYP) G 1 2 Features I = 50A 3 S D Low switching loss Low on resistance Low gate charge Lo... See More ⇒
Detailed specifications: DHI50N06FZC , DHI50N15 , DHI8004 , DHI80N08B22 , DHI8290 , DHI85N08 , DHD8290 , DHD90N03B17 , IRF640N , DHD80N08B22 , DHD90N045R , DHS025N06 , DHS025N06E , DHS025N10 , DHS025N10B , DHS025N10D , DHS025N10E .
Keywords - DHD50N06FZC MOSFET specs
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