E110N04 Datasheet. Specs and Replacement

Type Designator: E110N04  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 88 nS

Cossⓘ - Output Capacitance: 590 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO263

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E110N04 datasheet

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 110n04 f110n04 i110n04 e110n04 b110n04 d110n04.pdf pdf_icon

E110N04

110N04/F110N04/I110N04/ E110N04/B110N04/D110N04 160A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used V = 40V DSS advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the R = 3.5m DS(on) TYP) RoHS standard. I = 160A D 2 Features Fast Switching Low ON Resistance(Rdson ... See More ⇒

 8.1. Size:75K  secos
 sse110n03-03p.pdf pdf_icon

E110N04

SSE110N03-03P 110A , 30V , RDS(ON) 2.5m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize a D High Cell Density trench process to provide low RDS(on) C and to ensure minimal power loss and heat dissipatio... See More ⇒

 9.1. Size:367K  st
 ste110na20.pdf pdf_icon

E110N04

STE110NA20 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STE110NA20 200 V ... See More ⇒

 9.2. Size:258K  st
 ste110ns20fd.pdf pdf_icon

E110N04

STE110NS20FD N-channel 200V - 0.022 - 110A - ISOTOP MESH OVERLAY Power MOSFET General features Type VDSS RDS(on) ID STE110NS20FD 200V ... See More ⇒

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Detailed specifications: DHS025N10, DHS025N10B, DHS025N10D, DHS025N10E, DHS025N10U, DHS025N88, DHS025N88B, DHS025N88D, IRF630, E13N50, E20N50, E25N10, E50N06, E630, E640, E740, E80N06

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