E110N04 datasheet, подбор замены

 ..1. Size:1381K  cn wxdh
 110n04 f110n04 i110n04 e110n04 b110n04 d110n04.pdf 

110N04/F110N04/I110N04/ E110N04/B110N04/D110N04 160A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used V = 40V DSS advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the R = 3.5m DS(on) TYP) RoHS standard. I = 160A D 2 Features Fast Switching Low ON Resistance(Rdson

 8.1. Size:75K  secos
 sse110n03-03p.pdf 

SSE110N03-03P 110A , 30V , RDS(ON) 2.5m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize a D High Cell Density trench process to provide low RDS(on) C and to ensure minimal power loss and heat dissipatio

 9.1. Size:367K  st
 ste110na20.pdf 

STE110NA20 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STE110NA20 200 V

 9.2. Size:258K  st
 ste110ns20fd.pdf 

STE110NS20FD N-channel 200V - 0.022 - 110A - ISOTOP MESH OVERLAY Power MOSFET General features Type VDSS RDS(on) ID STE110NS20FD 200V

 9.3. Size:705K  matsuki electric
 me110n10t me110n10f.pdf 

ME110N10T/ME110N10F N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 6.2m @VGS=10V The ME110N10T and ME110N10F is the N-Channel logic enhancement Super high density cell design for extremely low RDS(ON) mode power field effect transistors, using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This h