E13N50 Datasheet. Specs and Replacement

Type Designator: E13N50  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 195 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: TO263

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E13N50 datasheet

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E13N50

E13N50 13A 500V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 500V planar technology which reduce the conduction loss, improve switching I = 13.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) =0.35 2 Features Fast switching ESD im... See More ⇒

Detailed specifications: DHS025N10B, DHS025N10D, DHS025N10E, DHS025N10U, DHS025N88, DHS025N88B, DHS025N88D, E110N04, IRF9540, E20N50, E25N10, E50N06, E630, E640, E740, E80N06, ED120N10ZR

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