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E13N50 Spec and Replacement


   Type Designator: E13N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO263

 E13N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

E13N50 Specs

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E13N50

E13N50 13A 500V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 500V planar technology which reduce the conduction loss, improve switching I = 13.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) =0.35 2 Features Fast switching ESD im... See More ⇒

Detailed specifications: DHS025N10B , DHS025N10D , DHS025N10E , DHS025N10U , DHS025N88 , DHS025N88B , DHS025N88D , E110N04 , IRF9540 , E20N50 , E25N10 , E50N06 , E630 , E640 , E740 , E80N06 , ED120N10ZR .

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