E20N50 Datasheet. Specs and Replacement

Type Designator: E20N50  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 277 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO263

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E20N50 datasheet

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 20n50 f20n50 i20n50 e20n50.pdf pdf_icon

E20N50

20N50/F20N50/ I20N50/E20N50 20A 500V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel enhanced vdmosfets, is obtained 2 D V = 500V DSS by the self-aligned planar technology which reduce the conduction loss, improve switching performance and R = 0.24 DS(on) (TYP) G enhance the avalanche energy. Which accords with the 1 RoHS standard. I = 20A 3 S D ... See More ⇒

Detailed specifications: DHS025N10D, DHS025N10E, DHS025N10U, DHS025N88, DHS025N88B, DHS025N88D, E110N04, E13N50, AON7408, E25N10, E50N06, E630, E640, E740, E80N06, ED120N10ZR, EN6005

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