All MOSFET. E20N50 Datasheet

 

E20N50 Datasheet and Replacement


   Type Designator: E20N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 277 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO263
 

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E20N50 Datasheet (PDF)

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E20N50

20N50/F20N50/I20N50/E20N5020A 500V N-channel Enhancement Mode Power MOSFET1 DescriptionThese silicon N-channel enhanced vdmosfets, is obtained2 DV = 500VDSSby the self-aligned planar technology which reduce theconduction loss, improve switching performance andR = 0.24DS(on) (TYP)Genhance the avalanche energy. Which accords with the1RoHS standard.I = 20A3 S D

Datasheet: DHS025N10D , DHS025N10E , DHS025N10U , DHS025N88 , DHS025N88B , DHS025N88D , E110N04 , E13N50 , 2N7000 , E25N10 , E50N06 , E630 , E640 , E740 , E80N06 , ED120N10ZR , EN6005 .

History: E50N06 | NCEP85T16 | IRFP460LCPBF | R6530ENZ | NCEP85T12 | NCEP85T14 | NCEP85T15

Keywords - E20N50 MOSFET datasheet

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