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E20N50 Spec and Replacement


   Type Designator: E20N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 277 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO263

 E20N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

E20N50 Specs

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 20n50 f20n50 i20n50 e20n50.pdf pdf_icon

E20N50

20N50/F20N50/ I20N50/E20N50 20A 500V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel enhanced vdmosfets, is obtained 2 D V = 500V DSS by the self-aligned planar technology which reduce the conduction loss, improve switching performance and R = 0.24 DS(on) (TYP) G enhance the avalanche energy. Which accords with the 1 RoHS standard. I = 20A 3 S D ... See More ⇒

Detailed specifications: DHS025N10D , DHS025N10E , DHS025N10U , DHS025N88 , DHS025N88B , DHS025N88D , E110N04 , E13N50 , AON7408 , E25N10 , E50N06 , E630 , E640 , E740 , E80N06 , ED120N10ZR , EN6005 .

History: SML80B13 | DSD150N10L3 | DSB190N10L3

Keywords - E20N50 MOSFET specs

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