E25N10 Spec and Replacement
Type Designator: E25N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 107 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: TO263
E25N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
E25N10 Specs
25n10 f25n10 i25n10 e25n10 b25n10 d25n10.pdf
25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used V = 100V DSS advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the R = 30m DS(on) TYP) RoHS standard. I = 25A D 2 Features Fast Switching Low ON Resistance(Rdson 36m ) ... See More ⇒
me25n15al me25n15al-g.pdf
ME25N15AL/ME25N15AL-G N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME25N15AL is the N-Channel logic enhancement mode power RDS(ON) 78m @VGS=10V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Exceptional on-r... See More ⇒
Detailed specifications: DHS025N10E , DHS025N10U , DHS025N88 , DHS025N88B , DHS025N88D , E110N04 , E13N50 , E20N50 , 2SK3878 , E50N06 , E630 , E640 , E740 , E80N06 , ED120N10ZR , EN6005 , F10N50 .
History: 3SK103 | CS8N90A8 | 25P10
Keywords - E25N10 MOSFET specs
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