All MOSFET. E25N10 Datasheet

 

E25N10 Datasheet and Replacement


   Type Designator: E25N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 61 nC
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 107 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO263
 

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E25N10 Datasheet (PDF)

 ..1. Size:1238K  cn wxdh
 25n10 f25n10 i25n10 e25n10 b25n10 d25n10.pdf pdf_icon

E25N10

25N10/F25N10/I25N10/E25N10/B25N10/D25N1025A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel Enhanced VDMOSFETs UsedV = 100VDSSadvanced trench technology design, provided excellentRDSON and low gate charge. Which accords with theR = 30mDS(on) TYP)RoHS standard.I = 25AD2 Features Fast Switching Low ON Resistance(Rdson36m)

 9.1. Size:2213K  matsuki electric
 me25n15al me25n15al-g.pdf pdf_icon

E25N10

ME25N15AL/ME25N15AL-G N- Channel 150V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME25N15AL is the N-Channel logic enhancement mode power RDS(ON) 78m@VGS=10Vfield effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON)trench technology. This high density process is especially tailored to Exceptional on-r

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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