E630 Datasheet and Replacement. Cross Reference Search

E630 Datasheet (PDF)

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630/F630/I630/E630/B630/D6309A 200V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the2 DV = 200Vself-aligned planar technology which reduce the conduction DSSloss, improve switching performance and enhance theR = 0.23DS(on) (TYP)Gavalanche energy. Which accords with the RoHS standard.1I = 9A3 S D2 Feature

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12A, 30VN-CHANNELMOSFETKNX6303AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features Advanced trenchprocess technology High density cell design for ultra lowon-resistance Fully characterized avalanche voltage and current2.Applications Vds=30V R =9.0m(typ.),VGS@10V,Ids@12ADS(ON) R =11.5m(typ.),VGS@4.5V,Ids@6ADS(ON)3. PinconfigurationPin Functio

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SE630KN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology For a single MOSFETand design to provide excellent RDS(ON) with V = 200VDSlow gate charge. It can be used in a wide R =260m @ V =10VDS(ON) GSvariety of applicationPin configurationsSee Diagram belowTO-252Absolute Maximum RatingsParameter

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .