630/F630/I630/E630/B630/D6309A 200V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the2 DV = 200Vself-aligned planar technology which reduce the conduction DSSloss, improve switching performance and enhance theR = 0.23DS(on) (TYP)Gavalanche energy. Which accords with the RoHS standard.1I = 9A3 S D2 Feature

12A, 30VN-CHANNELMOSFETKNX6303AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features Advanced trenchprocess technology High density cell design for ultra lowon-resistance Fully characterized avalanche voltage and current2.Applications Vds=30V R =9.0m(typ.),VGS@10V,Ids@12ADS(ON) R =11.5m(typ.),VGS@4.5V,Ids@6ADS(ON)3. PinconfigurationPin Functio

SE630KN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology For a single MOSFETand design to provide excellent RDS(ON) with V = 200VDSlow gate charge. It can be used in a wide R =260m @ V =10VDS(ON) GSvariety of applicationPin configurationsSee Diagram belowTO-252Absolute Maximum RatingsParameter