E640 Datasheet and Replacement
Type Designator: E640
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 183 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO263
E640 Datasheet (PDF)
640 f640 i640 e640 b640 d640.pdf

640/F640/I640/E640/B640/D64018A 200V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the2 DV = 200Vself-aligned planar technology which reduce the DSSconduction loss, improve switching performance andR = 0.12DS(on) (TYP)Genhance the avalanche energy. Which accords with the1RoHS standard.I = 18A3 S D2 Featur
Datasheet: DHS025N88B , DHS025N88D , E110N04 , E13N50 , E20N50 , E25N10 , E50N06 , E630 , IRF1010E , E740 , E80N06 , ED120N10ZR , EN6005 , F10N50 , F10N60 , F10N70 , F10N80 .
History: NP84N075NUE | TPC8025
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History: NP84N075NUE | TPC8025



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