All MOSFET. E640 Datasheet

 

E640 Datasheet and Replacement


   Type Designator: E640
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 183 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO263
 

 E640 substitution

   - MOSFET ⓘ Cross-Reference Search

 

E640 Datasheet (PDF)

 ..1. Size:1407K  cn wxdh
 640 f640 i640 e640 b640 d640.pdf pdf_icon

E640

640/F640/I640/E640/B640/D64018A 200V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the2 DV = 200Vself-aligned planar technology which reduce the DSSconduction loss, improve switching performance andR = 0.12DS(on) (TYP)Genhance the avalanche energy. Which accords with the1RoHS standard.I = 18A3 S D2 Featur

Datasheet: DHS025N88B , DHS025N88D , E110N04 , E13N50 , E20N50 , E25N10 , E50N06 , E630 , K4145 , E740 , E80N06 , ED120N10ZR , EN6005 , F10N50 , F10N60 , F10N70 , F10N80 .

History: ZXMN10A25G | AON6210 | TF3420 | IRFS4010 | PJM2301PSA-S | BUK7M10-40E | 2SK2825

Keywords - E640 MOSFET datasheet

 E640 cross reference
 E640 equivalent finder
 E640 lookup
 E640 substitution
 E640 replacement

 

 
Back to Top

 


 
.