All MOSFET. DJD380N65T Datasheet

 

DJD380N65T Datasheet and Replacement


   Type Designator: DJD380N65T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 119 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 10.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 19.6 nC
   tr ⓘ - Rise Time: 31.3 nS
   Cossⓘ - Output Capacitance: 92.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO252
 

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DJD380N65T Datasheet (PDF)

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DJD380N65T

DJD380N65T 10.6A 650V N-channel Super Junction Power MOSFET 1 Description This N-channel enhanced VDMOSFETs, is using advanced super junction technology and design to 2 DV = 650V DSSprovide excellent Rds(on) with low gate charge. Which R = 0.34 DS(on) (TYP)accords with the RoHS standard. G1I = 10.6A 3 S D2 Features Fast switching Low on resistance

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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