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DJD380N65T Spec and Replacement


   Type Designator: DJD380N65T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 119 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 31.3 nS
   Cossⓘ - Output Capacitance: 92.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO252

 DJD380N65T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DJD380N65T Specs

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DJD380N65T

DJD380N65T 10.6A 650V N-channel Super Junction Power MOSFET 1 Description This N-channel enhanced VDMOSFETs, is using advanced super junction technology and design to 2 D V = 650V DSS provide excellent Rds(on) with low gate charge. Which R = 0.34 DS(on) (TYP) accords with the RoHS standard. G 1 I = 10.6A 3 S D 2 Features Fast switching Low on resistance ... See More ⇒

Detailed specifications: F10N50 , F10N60 , F10N70 , F10N80 , F110N04 , DHZ24B31 , DJC070N60F , DJC070N65M2 , 5N65 , DJD420N70T , DJF380N65T , DJF420N70T , DSB150N10L3 , DSB190N10L3 , DSD040N08N3A , DSD065N04LA , DSD065N10L3A .

Keywords - DJD380N65T MOSFET specs

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