DSB150N10L3 Datasheet and Replacement
Type Designator: DSB150N10L3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 37 nC
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 176 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
Package: TO251
DSB150N10L3 substitution
DSB150N10L3 Datasheet (PDF)
dsd150n10l3 dsb150n10l3.pdf

DSD150N10L3&DSB150N10L3 100V/12m/60A N-MOSFET Features Key ParametersVDS Low on resistance 100VRDS(on)typ. Low reverse transfer capacitances 12mID 100% single pulse avalanche energy test 60ACiss@10V 100% VDS test 2320pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 7nCApplications Motor Control and Drive Charge/Discharge for Battery M
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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