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DSB150N10L3 Spec and Replacement


   Type Designator: DSB150N10L3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 176 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
   Package: TO251

 DSB150N10L3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DSB150N10L3 Specs

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DSB150N10L3

DSD150N10L3&DSB150N10L3 100V/12m /60A N-MOSFET Features Key Parameters VDS Low on resistance 100V RDS(on)typ. Low reverse transfer capacitances 12m ID 100% single pulse avalanche energy test 60A Ciss@10V 100% VDS test 2320pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 7nC Applications Motor Control and Drive Charge/Discharge for Battery M... See More ⇒

Detailed specifications: F110N04 , DHZ24B31 , DJC070N60F , DJC070N65M2 , DJD380N65T , DJD420N70T , DJF380N65T , DJF420N70T , IRF530 , DSB190N10L3 , DSD040N08N3A , DSD065N04LA , DSD065N10L3A , DSD090N10L3A , DSD150N10L3 , DSD190N10L3 , DSD270N12N3 .

History: SML80J44 | HAF2001

Keywords - DSB150N10L3 MOSFET specs

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