DSD040N08N3A Spec and Replacement
Type Designator: DSD040N08N3A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 186 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 67 nS
Cossⓘ - Output Capacitance: 923 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO252
DSD040N08N3A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DSD040N08N3A Specs
dsd040n08n3a.pdf
DSD040N08N3A 180A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.4m DS(on) (TYP) the RoHS standard. 1 3 S I = 180A D 2 Features AEC-Q101 qualified Fast switching Low... See More ⇒
Detailed specifications: DJC070N60F , DJC070N65M2 , DJD380N65T , DJD420N70T , DJF380N65T , DJF420N70T , DSB150N10L3 , DSB190N10L3 , NCEP15T14 , DSD065N04LA , DSD065N10L3A , DSD090N10L3A , DSD150N10L3 , DSD190N10L3 , DSD270N12N3 , DHS110N15 , DHS110N15D .
History: SML80B12
Keywords - DSD040N08N3A MOSFET specs
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