DSD040N08N3A Datasheet. Specs and Replacement
Type Designator: DSD040N08N3A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 186 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 67 nS
Cossⓘ - Output Capacitance: 923 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO252
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DSD040N08N3A datasheet
dsd040n08n3a.pdf
DSD040N08N3A 180A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.4m DS(on) (TYP) the RoHS standard. 1 3 S I = 180A D 2 Features AEC-Q101 qualified Fast switching Low... See More ⇒
Detailed specifications: DJC070N60F, DJC070N65M2, DJD380N65T, DJD420N70T, DJF380N65T, DJF420N70T, DSB150N10L3, DSB190N10L3, NCEP15T14, DSD065N04LA, DSD065N10L3A, DSD090N10L3A, DSD150N10L3, DSD190N10L3, DSD270N12N3, DHS110N15, DHS110N15D
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