All MOSFET. DSD040N08N3A Datasheet

 

DSD040N08N3A Datasheet and Replacement


   Type Designator: DSD040N08N3A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 186 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 923 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO252
 

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DSD040N08N3A Datasheet (PDF)

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DSD040N08N3A

DSD040N08N3A180A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.4mDS(on) (TYP)the RoHS standard.13 SI = 180AD2 Features AEC-Q101 qualified Fast switching Low

Datasheet: DJC070N60F , DJC070N65M2 , DJD380N65T , DJD420N70T , DJF380N65T , DJF420N70T , DSB150N10L3 , DSB190N10L3 , IRFP450 , DSD065N04LA , DSD065N10L3A , DSD090N10L3A , DSD150N10L3 , DSD190N10L3 , DSD270N12N3 , DHS110N15 , DHS110N15D .

History: IXTP200N075T | DSB190N10L3

Keywords - DSD040N08N3A MOSFET datasheet

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