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DSD040N08N3A Spec and Replacement


   Type Designator: DSD040N08N3A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 186 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 923 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO252

 DSD040N08N3A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DSD040N08N3A Specs

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DSD040N08N3A

DSD040N08N3A 180A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.4m DS(on) (TYP) the RoHS standard. 1 3 S I = 180A D 2 Features AEC-Q101 qualified Fast switching Low... See More ⇒

Detailed specifications: DJC070N60F , DJC070N65M2 , DJD380N65T , DJD420N70T , DJF380N65T , DJF420N70T , DSB150N10L3 , DSB190N10L3 , NCEP15T14 , DSD065N04LA , DSD065N10L3A , DSD090N10L3A , DSD150N10L3 , DSD190N10L3 , DSD270N12N3 , DHS110N15 , DHS110N15D .

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