All MOSFET. DSD040N08N3A Datasheet

 

DSD040N08N3A Datasheet and Replacement


   Type Designator: DSD040N08N3A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 186 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 85 nC
   tr ⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 923 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO252
 

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DSD040N08N3A Datasheet (PDF)

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DSD040N08N3A

DSD040N08N3A180A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.4mDS(on) (TYP)the RoHS standard.13 SI = 180AD2 Features AEC-Q101 qualified Fast switching Low

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

Keywords - DSD040N08N3A MOSFET datasheet

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