All MOSFET. DSD090N10L3A Datasheet

 

DSD090N10L3A Datasheet and Replacement


   Type Designator: DSD090N10L3A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id| ⓘ - Maximum Drain Current: 68 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 31 nC
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 454 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: TO252
 

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DSD090N10L3A Datasheet (PDF)

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DSD090N10L3A

DSD090N10L3A100V/8m/68A N-MOSFETFeatures Key ParametersVDS AEC-Q101 qualified 100VRDS(on)typ. Low on resistance 8mID Low reverse transfer capacitances 68ACiss@10V 100% single pulse avalanche energy test 1700pF 100% VDS test Qgd 7nC Pb-Free plating / Halogen-Free / RoHS compliantApplications Power switching applications DC-DC converters

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