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DSD090N10L3A Spec and Replacement


   Type Designator: DSD090N10L3A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 68 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 454 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: TO252

 DSD090N10L3A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DSD090N10L3A Specs

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DSD090N10L3A

DSD090N10L3A 100V/8m /68A N-MOSFET Features Key Parameters VDS AEC-Q101 qualified 100V RDS(on)typ. Low on resistance 8m ID Low reverse transfer capacitances 68A Ciss@10V 100% single pulse avalanche energy test 1700pF 100% VDS test Qgd 7nC Pb-Free plating / Halogen-Free / RoHS compliant Applications Power switching applications DC-DC converters... See More ⇒

Detailed specifications: DJD420N70T , DJF380N65T , DJF420N70T , DSB150N10L3 , DSB190N10L3 , DSD040N08N3A , DSD065N04LA , DSD065N10L3A , IRFP450 , DSD150N10L3 , DSD190N10L3 , DSD270N12N3 , DHS110N15 , DHS110N15D , DHS110N15E , DHS110N15F , DHS130N06B .

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Keywords - DSD090N10L3A MOSFET specs

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