All MOSFET. DSD150N10L3 Datasheet

 

DSD150N10L3 Datasheet and Replacement


   Type Designator: DSD150N10L3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 37 nC
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 176 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
   Package: TO252
 

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DSD150N10L3 Datasheet (PDF)

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DSD150N10L3

DSD150N10L3&DSB150N10L3 100V/12m/60A N-MOSFET Features Key ParametersVDS Low on resistance 100VRDS(on)typ. Low reverse transfer capacitances 12mID 100% single pulse avalanche energy test 60ACiss@10V 100% VDS test 2320pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 7nCApplications Motor Control and Drive Charge/Discharge for Battery M

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Keywords - DSD150N10L3 MOSFET datasheet

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