All MOSFET. DSD270N12N3 Datasheet

 

DSD270N12N3 Datasheet and Replacement


   Type Designator: DSD270N12N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 15.2 nC
   tr ⓘ - Rise Time: 81 nS
   Cossⓘ - Output Capacitance: 138 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TO252
 

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DSD270N12N3 Datasheet (PDF)

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DSD270N12N3

DSD270N12N335A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV =120VDSSadvanced Splite gate technology design, providedexcellent Rdson and low gate charge. Which accords withR = 23mG DS(on) (TYP)1the RoHS standard.I = 35A3 S D2 Features Fast switching Low on resistance Low gate charge

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