DSD270N12N3 Datasheet. Specs and Replacement
Type Designator: DSD270N12N3 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 81 nS
Cossⓘ - Output Capacitance: 138 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: TO252
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DSD270N12N3 substitution
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DSD270N12N3 datasheet
dsd270n12n3.pdf
DSD270N12N3 35A 120V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V =120V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with R = 23m G DS(on) (TYP) 1 the RoHS standard. I = 35A 3 S D 2 Features Fast switching Low on resistance Low gate charge... See More ⇒
Detailed specifications: DSB150N10L3, DSB190N10L3, DSD040N08N3A, DSD065N04LA, DSD065N10L3A, DSD090N10L3A, DSD150N10L3, DSD190N10L3, BS170, DHS110N15, DHS110N15D, DHS110N15E, DHS110N15F, DHS130N06B, DHS130N06D, DHS160N100B, DHS160N100D
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