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DHS130N06B Spec and Replacement


   Type Designator: DHS130N06B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.84 nS
   Cossⓘ - Output Capacitance: 637 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO251

 DHS130N06B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DHS130N06B Specs

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 dhs130n06b dhs130n06d.pdf pdf_icon

DHS130N06B

DHS130N06B&DHS130N06D 120A 70V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 70V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.9m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Features Low on resistance Low gate charg... See More ⇒

Detailed specifications: DSD090N10L3A , DSD150N10L3 , DSD190N10L3 , DSD270N12N3 , DHS110N15 , DHS110N15D , DHS110N15E , DHS110N15F , 10N65 , DHS130N06D , DHS160N100B , DHS160N100D , DHS180N10L , DHS180N10LB , DHS180N10LD , DHS180N10LE , DHS180N10LF .

History: AP4N3R6P

Keywords - DHS130N06B MOSFET specs

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