DHS130N06B Datasheet. Specs and Replacement
Type Designator: DHS130N06B 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 114 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.84 nS
Cossⓘ - Output Capacitance: 637 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO251
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DHS130N06B datasheet
dhs130n06b dhs130n06d.pdf
DHS130N06B&DHS130N06D 120A 70V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 70V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.9m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Features Low on resistance Low gate charg... See More ⇒
Detailed specifications: DSD090N10L3A, DSD150N10L3, DSD190N10L3, DSD270N12N3, DHS110N15, DHS110N15D, DHS110N15E, DHS110N15F, 10N65, DHS130N06D, DHS160N100B, DHS160N100D, DHS180N10L, DHS180N10LB, DHS180N10LD, DHS180N10LE, DHS180N10LF
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