DHS130N06D Datasheet. Specs and Replacement

Type Designator: DHS130N06D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 114 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.84 nS

Cossⓘ - Output Capacitance: 637 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO252

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DHS130N06D datasheet

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DHS130N06D

DHS130N06B&DHS130N06D 120A 70V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 70V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.9m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Features Low on resistance Low gate charg... See More ⇒

Detailed specifications: DSD150N10L3, DSD190N10L3, DSD270N12N3, DHS110N15, DHS110N15D, DHS110N15E, DHS110N15F, DHS130N06B, 5N60, DHS160N100B, DHS160N100D, DHS180N10L, DHS180N10LB, DHS180N10LD, DHS180N10LE, DHS180N10LF, DHS180N10LI

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.