All MOSFET. DHS180N10L Datasheet

 

DHS180N10L Datasheet and Replacement


   Type Designator: DHS180N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 358 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO220
 

 DHS180N10L substitution

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DHS180N10L Datasheet (PDF)

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 dhs180n10l dhs180n10lf dhs180n10li dhs180n10le dhs180n10lb dhs180n10ld.pdf pdf_icon

DHS180N10L

DHS180N10L/DHS180N10LF/DHS180N10LI/DHS180N10LE/DHS180N10LB/DHS180N10LD47A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced SGT trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 18mDS(on) (TYP)the RoHS standard.13 SI = 47AD2 Features

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 dhs180n10ld.pdf pdf_icon

DHS180N10L

DHS180N10LD 100V/15m/50A N-MOSFET Features Key ParametersVDS Low on resistance 100VRDS(on)typ. Low reverse transfer capacitances 15mID 100% single pulse avalanche energy test 50ACiss@10V 100% VDS test 1076pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 2nCApplications Motor Control and Drive Charge/Discharge for Battery Management Sy

Datasheet: DHS110N15 , DHS110N15D , DHS110N15E , DHS110N15F , DHS130N06B , DHS130N06D , DHS160N100B , DHS160N100D , 7N60 , DHS180N10LB , DHS180N10LD , DHS180N10LE , DHS180N10LF , DHS180N10LI , DHS250N10D , DHS400N10D , DTE043N04NA .

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