DHS180N10L Spec and Replacement
Type Designator: DHS180N10L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 115 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 47 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 358 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TO220
DHS180N10L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DHS180N10L Specs
dhs180n10l dhs180n10lf dhs180n10li dhs180n10le dhs180n10lb dhs180n10ld.pdf
DHS180N10L/DHS180N10LF/DHS180N10LI/ DHS180N10LE/DHS180N10LB/DHS180N10LD 47A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced SGT trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 18m DS(on) (TYP) the RoHS standard. 1 3 S I = 47A D 2 Features ... See More ⇒
dhs180n10ld.pdf
DHS180N10LD 100V/15m /50A N-MOSFET Features Key Parameters VDS Low on resistance 100V RDS(on)typ. Low reverse transfer capacitances 15m ID 100% single pulse avalanche energy test 50A Ciss@10V 100% VDS test 1076pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 2nC Applications Motor Control and Drive Charge/Discharge for Battery Management Sy... See More ⇒
Detailed specifications: DHS110N15 , DHS110N15D , DHS110N15E , DHS110N15F , DHS130N06B , DHS130N06D , DHS160N100B , DHS160N100D , AO3407 , DHS180N10LB , DHS180N10LD , DHS180N10LE , DHS180N10LF , DHS180N10LI , DHS250N10D , DHS400N10D , DTE043N04NA .
History: CIM3N150
Keywords - DHS180N10L MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
