All MOSFET. DHS250N10D Equivalents Search

 

DHS250N10D Spec and Replacement


   Type Designator: DHS250N10D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 58 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 24.5 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO252

 DHS250N10D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DHS250N10D Specs

 ..1. Size:804K  cn wxdh
 dhs250n10d.pdf pdf_icon

DHS250N10D

DHS250N10D 30A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V =100V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with G R = 25m DS(on) (TYP) 1 the RoHS standard. 3 S I = 30A D 2 Features Fast switching Low on resistance Low gate charge... See More ⇒

Detailed specifications: DHS160N100B , DHS160N100D , DHS180N10L , DHS180N10LB , DHS180N10LD , DHS180N10LE , DHS180N10LF , DHS180N10LI , IRFZ24N , DHS400N10D , DTE043N04NA , DTG018N04N , DTG023N03L , DTG025N04NA , DTG045N04NA , DTG050P06LA , DTJ018N04N .

History: AP3P9R0I

Keywords - DHS250N10D MOSFET specs

 DHS250N10D cross reference
 DHS250N10D equivalent finder
 DHS250N10D lookup
 DHS250N10D substitution
 DHS250N10D replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 
Back to Top

 


 
.