DHS250N10D Datasheet. Specs and Replacement
Type Designator: DHS250N10D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 58 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24.5 nS
Cossⓘ - Output Capacitance: 105 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO252
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DHS250N10D substitution
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DHS250N10D datasheet
dhs250n10d.pdf
DHS250N10D 30A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V =100V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with G R = 25m DS(on) (TYP) 1 the RoHS standard. 3 S I = 30A D 2 Features Fast switching Low on resistance Low gate charge... See More ⇒
Detailed specifications: DHS160N100B, DHS160N100D, DHS180N10L, DHS180N10LB, DHS180N10LD, DHS180N10LE, DHS180N10LF, DHS180N10LI, IRFZ24N, DHS400N10D, DTE043N04NA, DTG018N04N, DTG023N03L, DTG025N04NA, DTG045N04NA, DTG050P06LA, DTJ018N04N
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