All MOSFET. DHS250N10D Datasheet

 

DHS250N10D Datasheet and Replacement


   Type Designator: DHS250N10D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 58 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 12.3 nC
   tr ⓘ - Rise Time: 24.5 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO252
 

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DHS250N10D Datasheet (PDF)

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DHS250N10D

DHS250N10D30A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV =100VDSSadvanced Splite gate technology design, providedexcellent Rdson and low gate charge. Which accords with GR = 25mDS(on) (TYP)1the RoHS standard.3 SI = 30AD2 Features Fast switching Low on resistance Low gate charge

Datasheet: DHS160N100B , DHS160N100D , DHS180N10L , DHS180N10LB , DHS180N10LD , DHS180N10LE , DHS180N10LF , DHS180N10LI , AON6380 , DHS400N10D , DTE043N04NA , DTG018N04N , DTG023N03L , DTG025N04NA , DTG045N04NA , DTG050P06LA , DTJ018N04N .

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