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DTG023N03L Spec and Replacement


   Type Designator: DTG023N03L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 578 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
   Package: TO220

 DTG023N03L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DTG023N03L Specs

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DTG023N03L

DTG023N03L 30V/2.2m /150A N-MOSFET Features Key Parameters VDS Low on resistance 30V RDS(on)typ. Low reverse transfer capacitances 2.2m ID 100% single pulse avalanche energy test 150A 100% VDS test VTH 1.6V Ciss@10V Pb-Free plating / Halogen-Free / RoHS compliant 4394pF Qgd 18.3nC Applications Motor Control and Drive Charge/Discharge for Battery... See More ⇒

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DTG023N03L

DTE025N04NA&DTG025N04NA 220A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 2.1m DS(on) (TYP) standard. 1 3 S I = 220A D 2 Features AEC Q101 qualified MSL1 up to 260 C peak ... See More ⇒

Detailed specifications: DHS180N10LD , DHS180N10LE , DHS180N10LF , DHS180N10LI , DHS250N10D , DHS400N10D , DTE043N04NA , DTG018N04N , 75N75 , DTG025N04NA , DTG045N04NA , DTG050P06LA , DTJ018N04N , F12N60 , F13N50 , F14N65 , F16N65 .

History: DHSJ25N65F | JMCL0410AUD

Keywords - DTG023N03L MOSFET specs

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