DTG025N04NA Spec and Replacement
Type Designator: DTG025N04NA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 215 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 220 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 127 nS
Cossⓘ - Output Capacitance: 768 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: TO220
DTG025N04NA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DTG025N04NA Specs
dte025n04na dtg025n04na.pdf
DTE025N04NA&DTG025N04NA 220A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 2.1m DS(on) (TYP) standard. 1 3 S I = 220A D 2 Features AEC Q101 qualified MSL1 up to 260 C peak ... See More ⇒
dtg023n03l.pdf
DTG023N03L 30V/2.2m /150A N-MOSFET Features Key Parameters VDS Low on resistance 30V RDS(on)typ. Low reverse transfer capacitances 2.2m ID 100% single pulse avalanche energy test 150A 100% VDS test VTH 1.6V Ciss@10V Pb-Free plating / Halogen-Free / RoHS compliant 4394pF Qgd 18.3nC Applications Motor Control and Drive Charge/Discharge for Battery... See More ⇒
Detailed specifications: DHS180N10LE , DHS180N10LF , DHS180N10LI , DHS250N10D , DHS400N10D , DTE043N04NA , DTG018N04N , DTG023N03L , AO3400A , DTG045N04NA , DTG050P06LA , DTJ018N04N , F12N60 , F13N50 , F14N65 , F16N65 , F18N50 .
History: DHSJ25N65F | JMCL0410AUD
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: DHSJ25N65F | JMCL0410AUD
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