All MOSFET. DTG025N04NA Datasheet

 

DTG025N04NA Datasheet and Replacement


   Type Designator: DTG025N04NA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 215 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 220 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 120 nC
   tr ⓘ - Rise Time: 127 nS
   Cossⓘ - Output Capacitance: 768 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO220
 

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DTG025N04NA Datasheet (PDF)

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DTG025N04NA

DTE025N04NA&DTG025N04NA220A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 2.1mDS(on) (TYP)standard.13 SI = 220AD2 Features AEC Q101 qualified MSL1 up to 260C peak

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DTG025N04NA

DTG023N03L 30V/2.2m/150A N-MOSFET Features Key ParametersVDS Low on resistance 30VRDS(on)typ. Low reverse transfer capacitances 2.2mID 100% single pulse avalanche energy test 150A 100% VDS test VTH 1.6VCiss@10V Pb-Free plating / Halogen-Free / RoHS compliant 4394pFQgd 18.3nCApplications Motor Control and Drive Charge/Discharge for Battery

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - DTG025N04NA MOSFET datasheet

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