All MOSFET. DTG050P06LA Datasheet

 

DTG050P06LA Datasheet and Replacement


   Type Designator: DTG050P06LA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 140 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 736 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
   Package: TO220
 

 DTG050P06LA substitution

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DTG050P06LA Datasheet (PDF)

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DTG050P06LA

DTG050P06LA-140A -60V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets usedV = -60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 5.8mDS(on) (TYP)standard.I = -140AD2 Features Low on resistance Low gate charge Low reverse transfer capaci

Datasheet: DHS180N10LI , DHS250N10D , DHS400N10D , DTE043N04NA , DTG018N04N , DTG023N03L , DTG025N04NA , DTG045N04NA , IRF1405 , DTJ018N04N , F12N60 , F13N50 , F14N65 , F16N65 , F18N50 , F18N65 , F20N50 .

History: NP90N03VLG | IRL640A

Keywords - DTG050P06LA MOSFET datasheet

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