DTG050P06LA Datasheet. Specs and Replacement
Type Designator: DTG050P06LA 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 140 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 44 nS
Cossⓘ - Output Capacitance: 736 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
Package: TO220
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DTG050P06LA substitution
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DTG050P06LA datasheet
dtg050p06la.pdf
DTG050P06LA -140A -60V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhancement mode power mosfets used V = -60V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5.8m DS(on) (TYP) standard. I = -140A D 2 Features Low on resistance Low gate charge Low reverse transfer capaci... See More ⇒
Detailed specifications: DHS180N10LI, DHS250N10D, DHS400N10D, DTE043N04NA, DTG018N04N, DTG023N03L, DTG025N04NA, DTG045N04NA, STP65NF06, DTJ018N04N, F12N60, F13N50, F14N65, F16N65, F18N50, F18N65, F20N50
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History: IXTQ60N20T | 2SK3612-01S | IXTQ36N50P | 2SK3612-01L | SI6993DQ | IXTQ220N075T | PDC3908Z
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