DTG050P06LA Datasheet. Specs and Replacement

Type Designator: DTG050P06LA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 140 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 44 nS

Cossⓘ - Output Capacitance: 736 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm

Package: TO220

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DTG050P06LA datasheet

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DTG050P06LA

DTG050P06LA -140A -60V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhancement mode power mosfets used V = -60V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5.8m DS(on) (TYP) standard. I = -140A D 2 Features Low on resistance Low gate charge Low reverse transfer capaci... See More ⇒

Detailed specifications: DHS180N10LI, DHS250N10D, DHS400N10D, DTE043N04NA, DTG018N04N, DTG023N03L, DTG025N04NA, DTG045N04NA, STP65NF06, DTJ018N04N, F12N60, F13N50, F14N65, F16N65, F18N50, F18N65, F20N50

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