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DTG050P06LA Spec and Replacement


   Type Designator: DTG050P06LA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 140 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 736 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
   Package: TO220

 DTG050P06LA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DTG050P06LA Specs

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DTG050P06LA

DTG050P06LA -140A -60V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhancement mode power mosfets used V = -60V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5.8m DS(on) (TYP) standard. I = -140A D 2 Features Low on resistance Low gate charge Low reverse transfer capaci... See More ⇒

Detailed specifications: DHS180N10LI , DHS250N10D , DHS400N10D , DTE043N04NA , DTG018N04N , DTG023N03L , DTG025N04NA , DTG045N04NA , STP65NF06 , DTJ018N04N , F12N60 , F13N50 , F14N65 , F16N65 , F18N50 , F18N65 , F20N50 .

History: JMCL0410AUD | DHSJ25N65F

Keywords - DTG050P06LA MOSFET specs

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