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DTJ018N04N Spec and Replacement


   Type Designator: DTJ018N04N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 273 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 78 nS
   Cossⓘ - Output Capacitance: 1204 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
   Package: TO262

 DTJ018N04N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DTJ018N04N Specs

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DTJ018N04N

DTG018N04N/DTJ018N04N 180A 40V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent V = 40V DSS 2 D Rdson and low gate charge. Which accords with the RoHS R = 1.5m DS(on) (TO-220)TYP standard. G R = 1.5m DS(on) (TO-262)TYP 1 I = 300A D Silicon limited 3 S 2 Featur... See More ⇒

Detailed specifications: DHS250N10D , DHS400N10D , DTE043N04NA , DTG018N04N , DTG023N03L , DTG025N04NA , DTG045N04NA , DTG050P06LA , IRF1405 , F12N60 , F13N50 , F14N65 , F16N65 , F18N50 , F18N65 , F20N50 , F20N60 .

History: JMCL0410AUD | DHSJ25N65F

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