DTJ018N04N Datasheet. Specs and Replacement

Type Designator: DTJ018N04N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 273 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 78 nS

Cossⓘ - Output Capacitance: 1204 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm

Package: TO262

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DTJ018N04N datasheet

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DTJ018N04N

DTG018N04N/DTJ018N04N 180A 40V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent V = 40V DSS 2 D Rdson and low gate charge. Which accords with the RoHS R = 1.5m DS(on) (TO-220)TYP standard. G R = 1.5m DS(on) (TO-262)TYP 1 I = 300A D Silicon limited 3 S 2 Featur... See More ⇒

Detailed specifications: DHS250N10D, DHS400N10D, DTE043N04NA, DTG018N04N, DTG023N03L, DTG025N04NA, DTG045N04NA, DTG050P06LA, IRF1405, F12N60, F13N50, F14N65, F16N65, F18N50, F18N65, F20N50, F20N60

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