All MOSFET. DSP018N04LA Datasheet

 

DSP018N04LA Datasheet and Replacement


   Type Designator: DSP018N04LA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 77 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 60 nC
   tr ⓘ - Rise Time: 95.6 nS
   Cossⓘ - Output Capacitance: 1611 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
   Package: DFN5X6-8L
 

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DSP018N04LA Datasheet (PDF)

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DSP018N04LA

DSP018N04LA100A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 40VDSSadvanced splite gate trench technology design, provided 2 Dexcellent Rdson and low gate charge. Which accords withR = 1.4mDS(on) (TYP)the RoHS standard.G1I Silicon limit = 170AD3 S2 FeaturesI Package limit 100A=D

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