DSP018N04LA Spec and Replacement
Type Designator: DSP018N04LA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 77 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 95.6 nS
Cossⓘ - Output Capacitance: 1611 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
Package: DFN5X6-8L
DSP018N04LA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DSP018N04LA Specs
dsp018n04la.pdf
DSP018N04LA 100A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used V = 40V DSS advanced splite gate trench technology design, provided 2 D excellent Rdson and low gate charge. Which accords with R = 1.4m DS(on) (TYP) the RoHS standard. G 1 I Silicon limit = 170A D 3 S 2 Features I Package limit 100A = D... See More ⇒
Detailed specifications: DHS045N85 , DHS045N85B , DHS045N85D , DHS045N85E , DHS045N85F , DHS045N85I , DHS045N88 , DHS045N88B , 50N06 , DSP032N08NA , DSP037N08N3 , DSP038N08NA , DSP051N10N , DSP060N04LA , DSP070N10L3A , DSU007N04NA , DSU011N08N3A .
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